System A

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Contents

[edit] Material groups

[edit] Current status

As of 2007 System A has been converted to a metal organic molecular beam epitaxy machine (MOMBE). It is fitted with 4 sources:

  1. Silicon doping cell
  2. MBE-Komponenten Silicon Sublimation source
  3. Veeco Low Temperature Gas Source (Er(TMOD)3 - tris-2,2,6,6-tetra methyl-3,5-octane dionato Erbium)
  4. Veeco Low Temperature Gas Source (TEOS - tetra-ethyl-ortho-silicate)

System A is used to grown SiErO structures which are engineered to emit at the 1.55um wavelength range.

Historically In the past System A was used to grow III-V lasers. The materials it could use were:

  1. Gallium
  2. Arsenic
  3. Beryllium
  4. Indium
  5. Aluminum
  6. Silicon
  7. CBr4

[edit] People

100x 183pxYan Zheng 2006 -

Yan received his B.S. in Electrical and Computer Engineering from UCSD where he was very involved with student organizations and engineering projects. In 2005 he was the recipient of the UCSD Undergraduate Student Leadership Award and several IEEE awards.

Currently he is the Program Director of the Leadership in Team Engineering (LITE) course. In the Fall quarter of 2006 he lead two teams of student engineers in designing some innovative solutions for the Santa Barbara Zoo.

  1. Child monitoring system for parks and organizations using a custom programmed PDA
  2. Wireless train position, speed and bearing monitoring
  3. Portable rail road track separation monitor

In its second year, LITE will being designing an interactive claw game for the Santa Barbara Earth Day in 2008.

His current research is centered around growth and fabrication of novel silicon based light emitters. Using precisely controlled MBE growth several mono layers of optically active material in silicon can be created. All processes are designed to be CMOS compatible. The application of a useful silicon light emitter, i.e. laser diode, ranges from telecommunications to optical interconnects.

[edit] Publications

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[edit] Contact

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