Research / Systems

The UCSB MBE Lab currently has eight operational systems:

System A

As of 2007 System A has been converted to a metal organic molecular beam epitaxy machine (MOMBE). It is fitted with 4 sources. System A is used to grown SiErO structures which are engineered to emit at the 1.55um wavelength range.

System C

System C is a vertical reactor with 8 ports plus a dual gas injector/pyrometry port. As of 3/3/2008, available materials are: Al, Ga, In, Er, As, Sb, Si, Be, and CBr4. In addition, there is an e-beam evaporation chamber attached under UHV, allowing the deposition of thin films of Mo and possibly W. A thermally cracked hydrogen station allows desorption of native oxides from GaSb and similar wafers without melting them.

Recent activity on System C includes: ErAs nanoparticles and films on GaAs and InGaAs for physics, tunnel junctions, and thermoelectrics, High-mobility channels for InGaAs MOSFETs are also grown on this machine, as are record low resistance ohmic contacts to InGaAs and InAs for next-generation MOSFETs and HBTs.

GEN III

The GEN III has 12 sources.

Spintronics

The Spintronics machine has has 8 sources.

Nitride GEN II

Quick summary of System C. Lorem ipsum dolor sit amet, consectetuer adipiscing elit. Vivamus sem. Curabitur placerat adipiscing ante. Praesent lobortis justo sit amet dolor. Sed tincidunt. Cras justo velit, gravida ac, mollis a, dignissim et, enim. Curabitur luctus purus ut orci. Fusce dapibus massa in enim. Suspendisse sit amet metus. Vestibulum ante ipsum primis in faucibus orci luctus et ultrices posuere cubilia Curae; In vel diam ut libero egestas placerat.

Nitride 930

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Oxide 930

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Oxide 620

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